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Nowadays process simulation has proven to be one of the main stages in constructions and integrated semiconductor structures operating-routing sequence development. It allows to preliminary derive the characteristics and parameters of such structures, reducing the full-scale experiments number. The high-voltage bipolar silicon n–p–n transistor of medium power was discussed in this work. The required conditions included the collector-emitter breakdown voltage over 80 V, collector current no more than 0.5 A with maximum power dissipation up to 0.63 W. The two-dimensional device-process simulation of the transistor was performed; the transistor operating-routing sequence was developed and optimized. The design was carried out using the Synopsys software package that included a set of TSuprem4 programs for two-dimensional process simulation and a software package Medici for simulating electrical characteristics. The transistor structure has been obtained by means of the TSuprem4 program set; the transistor design-technological and physical-topological parameters were determined. The silicon n–p–n transistor device simulation was carried out by means of the Medici software package. The calculations of the investigated structure electrical characteristics and main electro-physical parameters values were performed.

Key words: n–p–n transistor, process simulation, design-technological parameter, electro-physical parameter, volt-ampere characteristic
Published in: Integral electronics elements
Bibliography link: Lagunovich N. L. Process simulation of a high voltage silicon n–p–n-tran-sistor. Izv. vuzov. Elektronika = Proc. Univ. Electronics. 2026;31(3):289–295. (In Russ.). DOI: 10.24151/1561-5405-2026-31-3-289-295.VRODVC

Nataliya L. Lagunovich
Belarusian National Technical University, Belarus, 220013, Minsk, Independence ave., 65

1. Антонетти П., Антониадис Д., Даттон Р., Оулдхем У. (ред.). МОП-СБИС. Моделирование элементов и технологических процессов. Пер. с англ. В. Л. Кустова и др. М.: Радио и связь; 1988. 495 с. Antognetti P., Antoniadis D. A., Dutton R. W., Oldham W. G. (eds). Process and device simulation for MOS-VLSI circuits. Dordrecht: Springer; 1983. 636 p. https://doi.org/10.1007/978-94-009-6842-4

2. Абрамов И. И. Лекции по моделированию элементов интегральных схем. М.; Ижевск: НИЦ «Регулярная и хаотическая динамика»; 2005. 152 с. EDN: YOVOVK. Abramov I. I. Lectures on simulation of integrated circuits elements. Moscow; Izhevsk: R&C Dynamics Publ.; 2005. 152 p. (In Russ.).

3. Индришенок В. И., Певцов Е. Ф. Основы приборно-технологического моделирования в Sentaurus TCAD: учеб. пособие. М.: МИРЭА; 2018. 1 CD-ROM. Indrishenok V. I., Pevtsov E. F. Fundamentals of device-process simulation in Sentaurus TCAD: study guide. Moscow: MIREA Publ.; 2018. 1 CD-ROM. (In Russ.).

4. Silvaco. Available at: http://www.silvaco.com (accessed: 17.03.2024).

5. Synopsys. Available at: http://www.synopsys.com (accessed: 11.03.2024).

6. Лагунович Н. Л. Компьютерная программа MOD-1D. Свид. о гос. регистрации программы для ЭВМ, 742 Респ. Беларусь, t 20140041, 10.03.2015. Lagunovich N. L. Computer program MOD-1D. Certificate on official registration of the computer program. 742 Rep. of Belarus. No. t 20140041, 10.03.2015. (In Russ.).

7. Зи С. М. Физика полупроводниковых приборов: в 2 кн. Кн. 1. М.: Мир; 1984. 455 с. Sze S. M. Physics of semiconductor devices. 2nd ed. New York: John Wiley & Sons; 1981. 868 p.

8. Маллер Р., Кейминс Т. Элементы интегральных схем. М.: Мир; 1989. 630 с. Muller R. S., Kamins Th. I. Device electronics for integrated circuits. 2nd ed. New York: John Wiley & Sons; 1986. 524 p.

9. Dudar N. L., Borzdov V. M. The simulation of pnp-transistor as an element of high-voltage integrated circuits by various parameters of epitaxial film. In: 2010 East-West Design & Test Symposium (EWDTS), St. Petersburg, Russia, September 17–20. St. Petersburg: IEEE; 2010, pp. 262–263.

10. Дударь Н. Л., Сякерский В. С., Емельянов Т. Ф. Моделирование и исследование экспериментальных образцов высоковольтного РМОП-транзистора. Весцi НАН Беларусi. Сер. фiз.-тэхн. навук. 2008;(3):90–94. Dudar N. L., Syakersky V. S., Emelyanov T. F. The high-voltage PMOS transistor simulation and investigation of its experimental samples. Vyestsi NAN Byelarusi. Syer. fiz.-tekhn. navuk = Proceedings of the National Academy of Sciences of Belarus. Physico-Technical Series. 2008;(3):90–94. (In Russ.).

11. Lagunovich N., Serenkov P. Optimization of guard rings construction and epitaxial film resistivity value of power NDMOS-transistor by regression analysis. In: 4th International Conference on Emerging Trends in Engineering, Science and Technology 2025 (Sandip, India, 11–12 Apr. 2025). Sandip: SIEM; 2025, pp. 35–41.

12. Петухов В. М. Биполярные транзисторы средней и большой мощности сверхвысокочастотные и их зарубежные аналоги: справочник. Т. 4. М.: КУбК-а; 1997. 544 с. Petukhov V. M. Bipolar transistors of medium and high power, ultrahigh-frequency, and their foreign analogues: reference book. Vol. 4. Moscow: KUbK-a Publ.; 1997. 544 p. (In Russ.).

13. Алексеев Р. П., Бормонтов А. Е., Быкадорова Г. В., Кожевников В. А. (сост.). Приборно-технологическое проектирование элементной базы мощной СВЧ-электроники: учеб.-метод. пособие. Воронеж: ВГУ; 2016. 70 с. Alekseev R. P., Bormontov A. E., Bykadorova G. V., Kozhevnikov V. A. (comp.). The element base device-process design of high-power microwave electronics: study guide. Voronezh: VSU Publ.; 2016. 70 p. (In Russ.).

14. Нелаев В. В., Стемпицкий В. Р. Технологическое проектирование интегральных схем. Программа SSuprem4. Минск: БГУИР; 2004. 102 с. Nelaev V. V., Stempitsky V. R. Technological design of integrated circuits. SSuprem4 software. Minsk: BSUIR Publ.; 2004. 102 p. (In Russ.).

15. Кремлев В. Я. Физико-топологическое моделирование структур элементов БИС. In: Автоматизация проектирования БИС: в 6 кн. Под ред. Г. Г. Казеннова. Кн. 5. М.: Высш. шк.; 1990. 144 с. Kremlev V. Ya. Physical and topological modeling of LSI elements structures. In: LSI design automation: in 6 books. Ed. G. G. Kazennov. Book 5. Moscow: Vyssh. shk. Publ.; 1990. 144 p. (In Russ.).

Information about the publication

UDK: 621.382.333.027.3
Publication type: Scientific article
Source lang: Russian
DOI: 10.24151/1561-5405-2026-31-3-289-295
RISC id: VRODVC

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